?002 fairchild semiconductor corporation RHRU100120 rev. b RHRU100120 100a, 1200v hyperfast diode the RHRU100120 is a hyperfast diode with soft recovery characteristics (t rr < 90ns). it has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as a freewheeling/clamping diode and recti?r in a variety of switching power supplies and other power switching applications. its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. formerly developmental type ta49070. symbol features hyperfast with soft recovery. . . . . . . . . . . . . . . . . . <90ns operating temperature . . . . . . . . . . . . . . . . . . . . . . 175 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200v avalanche energy rated planar construction applications switching power supplies power switching circuits general purpose packaging jedec style to-218 ordering information part number package brand RHRU100120 to-218 rhr100120 note: when ordering, use the entire part number. k a anode cathode (flange) absolute maximum ratings t c = 25 o c, unless otherwise speci?d RHRU100120 units peak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 1200 v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v rwm 1200 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 1200 v average recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(av) 100 a (t c = 62.5 o c) repetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i frm 200 a (square wave, 20khz) nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i fsm 1000 a (halfwave, 1 phase, 60hz) maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 300 w avalanche energy (see figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .e avl 50 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t stg , t j -65 to 175 o c data sheet january 2002
?002 fairchild semiconductor corporation RHRU100120 rev. b electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition min typ max units v f i f = 100a - - 3.2 v i f = 100a, t c = 150 o c - - 2.6 v i r v r = 1200v - - 250 a v r = 1200v, t c = 150 o c- - 2ma t rr i f = 1a, di f /dt = 100a/ s- - 90ns i f = 100a, di f /dt = 100a/ s - - 100 ns t a i f = 100a, di f /dt = 100a/ s - 60 - ns t b i f = 100a, di f /dt = 100a/ s - 25 - ns r jc - - 0.5 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (see figure 6), summation of t a + t b . t a = time to reach peak reverse current (see figure 6). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 6). r jc = thermal resistance junction to case. pw = pulse width. d = duty cycle. typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage v f , forward voltage (v) 1 500 100 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 o c 100 o c 175 o c i f , forward current (a) v r , reverse voltage (v) 0 200 400 600 800 1000 1200 1000 100 0.01 0.1 1 10 175 o c 100 o c 25 o c i r , reverse current ( a) RHRU100120
?002 fairchild semiconductor corporation RHRU100120 rev. b figure 3. t rr , t a and t b curves vs forward current figure 4. current derating curve typical performance curves (continued) i f , forward current (a) t, recovery times (ns) 1 0 75 100 125 150 10 t rr t a t b 50 25 100 t c = 25 o c, di f /dt = 100a/ s 100 20 0 25 50 75 100 150 175 125 40 60 80 dc t c , case temperature ( o c) i f(av) , average forward current (a) sq. wave test circuits and waveforms figure 5. t rr test circuit figure 6. t rr waveforms and definitions figure 7. avalanche energy test circuit figure 8. avalanche current and voltage waveforms r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i max = 1.6a l = 40mh iv t 0 t 1 t 2 i l v avl t i l RHRU100120
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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